SiC FETs deliver low switching loss and increased efficiency for industrial applications

28-09-2022 | Mouser Electronics | Semiconductors

Mouser now stocks the UJ4C/SC FETs from UnitedSiC (now Qorvo) in an industry-standard, D2PAK-7L surface-mount package. The series devices are 750V SiC FETs that capitalise on the D2PAK-7L package option to supply low switching loss, increased efficiency at higher speeds, and enhanced system power density. The FETs are optimised for applications, including onboard chargers, soft-switched DC-DC converters, battery charging, and IT/server power supplies.

The devices employ a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a silicon MOSFET to produce a normally off SiC FET. The FETs decrease inductance from compact internal connection loops, which, together with the included Kelvin source connection, produces low switching loss, allowing higher frequency operation and enhanced system power density.

The D2PAK-7L version of the series is offered in on-resistance options from 9mOhm to 60mOhm, providing design flexibility while keeping generous design margins and circuit robustness. Rated to 750V, the FETs provide a best-in-class on-resistance × area (RDS(on) x A) figure of merit and a low body diode, ultra-low gate charge, and a 4.8V threshold voltage that allows a gate drive of 0V to 15V for ultimate versatility with low conduction losses.