DDR4 SDRAM offers improved performance with lower operating voltages

21-09-2022 | Alliance Memory | Semiconductors

Alliance Memory has added to its portfolio of CMOS DDR4 SDRAMs with new "A" die versions of the 4Gb AS4C256M16D4A and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively. Constructed on a finer process that produces a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN provide enhanced performance – with lower power consumption and higher speeds and transfer rates – at a lower cost. Also, it is continuing its partnership with Micron Technology and providing the company's MT40A1G16KH-062E DDR4 SDRAM to offers customers a 16Gb option.

To increase battery life in portable electronics such as smartphones and tablets, the new devices provide low operating voltages of +1.2V (±0.06V). The DDR4s are designed, qualified, and recommended for usage in 5G designs, computing applications, smart meters, surveillance systems, HMI, digital signal controllers, PNDs, and more. Constructed on a new process technology, the new devices provide fast clock speeds to 1600MHz and transfer rates to 3200Mbps.

The devices support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly. An auto pre-charge function supplies a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions comprise auto- or self-refresh.

With minimal die shrinks, these DDR4 SDRAMs offer reliable drop-in, pin-for-pin-compatible replacements for many similar solutions – removing the requirement for costly redesigns and part requalification. Provided in commercial (0C to +95C) and industrial (-40C to +95C) temperature ranges, the new "A" die devices are ideal for the industrial, networking, gaming, telecommunications, and consumer markets, for which it is using a dual sourcing strategy to secure supply longevity.

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