Smaller MOSFET gate driver for back-to-back connection N-channel MOSFETs

Toshiba Electronics Europe GmbH has released a new MOSFET gate driver IC TCK421G that controls the gate voltage of external N-channel MOSFETs based upon the input voltage. 

The driver is ideal for configuring a power multiplexer or a load switch circuit furnished with reverse-current blocking by combining a back-to-back connection of external N-channel MOSFETs. 

The device includes a charge pump circuit that supports a wide range of input voltages (VIN) from 2.7 to 28V, offering a stable supply of 10V to the gate-source voltage of external MOSFETs, thereby enabling the switching of large currents. The typical input quiescent current in the ON state (IQ(ON)) is as low as 140mA, whilst the standby current in the OFF state (IQ(OFF)) is just 0.5mA. Also, the device comprises an overvoltage and undervoltage lockout function. The gate drive voltage can be chosen to fit the application.

Housed in the chip-scale WCSP6G package, the device has a footprint of only 1.2mm x 0.8mm and a height of 0.35mm. This is one of the tiniest packages in the industry and permits use in densely packed devices such as wearables and smartphones.

It is the first product released in a series that will comprise six devices. Due to its high efficiency and small size, it can be employed in many applications, including battery-powered, consumer and industrial equipment.