Anti-sulfuration DRAM modules offer improvements in capacity and voltage

09-09-2021 | New Yorker Electronics | Semiconductors

New Yorker Electronics has released the new Innodisk Industrial-grade DDR5 DRAM modules. The JESD79-5 DDR5 SDRAM provides notable improvements in capacity, speed, voltage and ECC functions. The modules comply with all relevant JEDEC standards and are offered in 16GB and 32GB capacities, as 4800MT/s.

The DDR5 specification features up to four times as much capacity per IC, increasing the maximum attainable per die capacity to 64GB and bringing the maximum potential capacity for a single DDR5 DIMM to 128GB. The DDR5 DRAM also has a theoretical maximum transfer speed of 6400MT/s, doubling the rate of its predecessor, DDR4. Also, the voltage has been lowered from 1.2V to 1.1V, decreasing overall power consumption.

Another structural change is power management has been moved onto the DIMM, decreasing redundant power management circuitry on the motherboard for unused DIMM slots as in prior generations. For DDR5, each DIMM has two 40-bit channels (32 data bits, eight ECC bits each) for the same data total with more ECC bits. Two smaller independent channels improve memory access efficiency, leading to greater speeds with higher efficiency. Innodisk currently offers DDR5 up to 32GB and 4800MT/s.

Typical application areas include industrial/embedded, surveillance, automation, and healthcare.

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