Thin UFS embedded flash memory device for high-end 5G applications

11-03-2021 | Kioxia | Semiconductors

KIOXIA Europe GmbH offers sampling of its 1TB UFS Ver. 3.1 embedded flash memory devices. Contained in a 1.1mm-high package – claiming to make it the thinnest 1TB UFS available – the new product utilises the company's BiCS FLASH 3D flash memory and delivers sequential read speed of up to 2,050MB/sec and sequential write speed of up to 1,200MB/sec.

The device brings the ultra-high-speed read/write performance, low power consumption, shortened application launch times and storage capacity required by 5G and other digital consumer products.

The new 1TB UFS device integrates BiCS FLASH 3D flash memory and a controller, which performs error correction, wear levelling, logical-to-physical address translation and bad-block management for uncomplicated system development.

“The introduction of a 1 TB UFS device with a super-thin package reconfirms the leading position of KIOXIA in the mobile NAND Flash memory market. Mobile markets continuously require higher performance and densities to enable the development of new features and functions”, explains Axel Stoermann, vice president Memory Marketing and Engineering, KIOXIA Europe GmbH.

By Natasha Shek