SiC Schottky barrier diodes with improved chip design

26-08-2020 | Mouser Electronics | Semiconductors

Toshiba TRSxxN65FB 650V SiC Schottky Barrier Diodes (SBDs), available now from Mouser, are the 2nd generation SiC SBDs with the improved Junction Barrier-controlled Schottky-structure (JBS) chip design. These devices provide high surge current abilities and low-loss characteristics with a non-repetitive peak forward surge current ratings.


The diodes use the TO-247 package and offer 12A, 16A, 20A, and 24A four forward DC ratings (both legs) supporting the increase of power of equipment. The thin wafer technology assures low forward voltages and low switching losses.


Typical applications include PFC, solar inverters, servers, UPS, communication equipment, multi-function printers, DC-DC converters, and power supplying facilities for electric vehicles.

Related product news