MOSFET offers best in class on-resistance times gate charge FOM to increase efficiency

03-02-2020 | Vishay | Power

Vishay Intertechnology offers a new 80V TrenchFET Gen IV n-channel power MOSFET in the 6.15mm x 5.15mm PowerPAK SO-8 single package. Created to save energy by improving the efficiency of power conversion topologies and switching circuitry, the Vishay Siliconix SiR680ADP provides best in class on-resistance times gate charge — a key FOM for MOSFETs employed in power conversion applications — of 129 mOhm*nC.

The device combines on-resistance down to 2.35mOhm typical at 10V with ultra-low gate charge of 55nC and COSS of 614pF. These specifications are fine-tuned to decrease the power losses from switching, channel conduction, and diode conduction, occurring in increased efficiency. The MOSFET's on-resistance times gate charge FOM is claimed to be 12.2% lower than the nearest competing product and 22.5% lower than the previous-generation device, making it the most efficient solution offered for typical 48V input to 12V output DC-DC converters.

The device will assist as a building block in a extensive variety of DC-DC and AC/DC conversion applications including synchronous rectification, primary-side switching, resonant tank switching converters, buck-boost converters, and the OR-ing function in systems including telecom and data centre server power supplies; motor drive control in power tools and industrial equipment; solar micro-inverters; and battery switching in battery management modules.

The MOSFET is 100% RG and UIS-tested, RoHS-compliant, and halogen-free.

By Natasha Shek