N-Channel MOSFET increases power density while cutting condition power loss

07-01-2020 | New Yorker Electronics | Power

New Yorker Electronics now offers the Vishay N-Channel MOSFET providing what is claimed to be the lowest maximum RDS(on) rating at VGS = 10V and enhances power density as the RDS(on) cuts conduction power loss. The Vishay Siliconix SiRA20DP TrenchFET Gen IV N-Channel MOSFET offers the lowest gate charge (Qg) for devices with maximum RDS(on) <0.6mOhm, therefore, facilitating high efficiency for DC-DC conversion.

The 25V device also provides a gate-drain charge/gate-source charge ratio that decreases switching related power loss. The MOSFET gives the lowest RDS(ON) in its class by decreasing any switching-related power loss. This is accomplished by optimising the total Qg, Qgd and Qgd/Qgs ratio. The very low Qgd Miller Effect charge allows passing through plateau voltage faster.

The device is a 100% Rg and UIS tested TrenchFET Gen IV MOSFET. Typical applications comprise synchronous rectification, high power density DC-DC, synchronous buck converter, OR-ing, load switching and battery management.

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