Common-drain dual N-Channel MOSFET increases power density and efficiency

16-12-2019 | Vishay | Power

Vishay Intertechnology offers a new common-drain dual n-channel 60V MOSFET in the compact, thermally enhanced PowerPAK 1212-8SCD package. Designed to increase power density and efficiency in battery management systems, plug-in and wireless chargers, DC-DC converters, and power supplies, the Vishay Siliconix SiSF20DN provides what is claimed to be the industry's lowest RS-S(ON) in a 60V common-drain device.


The dual MOSFET provides RS-S(ON) down to 10mOhm typical at 10V, the lowest among 60V devices in the 3mm x 3mm footprint. This value also represents a 42.5% improvement over the next best solution in this footprint size and is 89% lower than the company's previous-generation devices. The result is decreased voltage drops across the power path and minimised power losses for increased efficiency. For higher power density, the device's RS1S2(ON) times area is 46.6% lower than the next best alternative MOSFET, even when including larger 6mm x 5mm solutions.


To save PCB space, decrease component counts, and simplify designs, the device employs an optimised package construction with two monolithically integrated TrenchFET Gen IV n channel MOSFETs in a common drain configuration. The device's source contacts are placed side by side, with enlarged connections extending the contact area with the PCB and decreasing resistivity further compared to conventional dual package types. This design makes the MOSFET excellent for bidirectional switching in 24V systems and industrial applications, including factory automation, drones, motor drives, white goods, power tools, robotics, security/surveillance, and smoke alarms.


The device is 100% Rg and UIS-tested, RoHS-compliant, and halogen-free.

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