Product line bolstered with new 4Gb high-speed CMOS DDR4 SDRAMs

16-10-2019 | Alliance Memory | Semiconductors

Alliance Memory has extended its product offering with a new line of high-speed CMOS DDR4 SDRAMs. For enhanced performance over previous-generation DDR3 devices, the 4Gb AS4C256M16D4 and AS4C512M8D4 provide lower power consumption and faster data transfer rates in 96-ball and 78-ball FBGA packages.

When compared to DDR3 SDRAMs, the devices reduce operating voltages from 1.5V to +1.2V (±0.06V) to increase battery life in portable electronics, including smartphones, notebook computers, and tablets. For improved efficiency and performance in desktop computers and servers, the 256Mb x 16-bit AS4C256M16D4 and 512M x 8-bit AS4C512M8D4 provide up to 16 memory banks and give faster clock speeds to 1333MHz for very high transfer rates of 2400Mbps/pin (1200MHz) and 2666Mbps/pin (1333MHz).

With minimal die shrinks, the DDR4 SDRAMs give reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — removing the requirement for expensive redesigns and part requalification. Provided in extended commercial (0C to +95C) and industrial (-40C to +95C) temperature ranges, the devices are perfect for the automotive, industrial, medical, IoT, gaming, and consumer markets.

By Natasha Shek