Isolated gate drivers offer best-in-class propagation delay and pulse-width distortion

30-05-2019 | Texas Instruments | Power

Texas Instruments UCC21530/UCC21530-Q1 Isolated Dual-Channel Gate Drivers feature a 4A source and 6A sink peak current and is intended to drive IGBTs and SiC MOSFETs up to 5MHz with best-in-class propagation delay and pulse-width distortion. The driver's input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 100V/ns CMTI. Also, the internal functional isolation within the two secondary-side drivers provides a working voltage of up to 1850V.


The gate drivers can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable DT. The EN pin pulled low, shuts down both outputs together and provides for normal operation when left open or pulled high. A primary-side logic failure forces both outputs low as a fail-safe measure.


Further features include VDD supply voltages up to 25V, and a wide input VCCI range from 3V to 18V, making the driver fit for interfacing with both analog and digital controllers. The supply voltage pins provide UVLO protection. The devices allow high efficiency, high power density, and robustness in a broad variety of power applications. The UCC21530-Q1 devices are AEC-Q100 qualified for automotive applications.


Typical applications include solar string and central inverters; AC-to-DC and DC-to-DC charging piles; AC inverter and servo drive; AC-to-DC and DC-to-DC power delivery; and energy storage systems.

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