MOSFET reduces power losses to increase efficiency

20-02-2019 | Vishay | Power

Vishay Intertechnology has introduced a new 60V TrenchFET Gen IV n-channel power MOSFET in the 6.15mm x 5.15mm PowerPAK SO-8 single package. Devised to improve the efficiency of power conversion topologies, the Vishay Siliconix SiR626DP provides 36% lower on-resistance than previous-generation devices while achieving the lowest gate charge and output charge in its class.

The device combines a maximum on-resistance down to 1.7mOhm at 10V with ultra-low gate charge of 52nC, output charge of 68nC, and COSS of 992pF. The resulting gate charge times on-resistance and output charge times on-resistance are 32% and 45% lower, respectively than previous-generation devices. The MOSFET's COSS is 69% lower.

The device's improved specifications are fine-tuned to minimise conduction and switching losses. The result is improved efficiency for synchronous rectification in AC/DC topologies; primary and secondary-side switching in isolated DC-DC topologies for solar micro-inverters and telecom, server, and medical equipment power supplies; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.

The MOSFET is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.

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