Gallium Nitride HEMTs provide high efficiency, power density and reliability

Infineon CoolGaN Gallium Nitride HEMTs, available from Mouser, provides excellent advantages including ultimate efficiency, power density, reliability, and highest quality over silicon. CoolGaN transistors are built with very reliable technology, intended for the highest efficiency and power density in switch mode power supplies. The devices operate similarly to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure. The CoolGaN 400V and 600V e-mode HEMTs provide 98%+ system efficiency and provide an impressive FOM resulting in valuable application benefits. The devices are strongly qualified beyond the standards, with a triple rise in power density, and optimised turn-on and turn-off modes. The device's quality is perfect for hard and soft switching topologies. CoolGaN allows the adaptation of simpler half-bridge topologies for PFC that includes the removal of the lossy input bridge rectifier. The devices offer a higher critical electrical field for power semiconductor devices providing for excellent high-speed switching. Typical applications include servers, telecoms, wireless charging, and adapters and chargers.