Power MOSFETs have faster operation and reduced switching loss

01-11-2016 | Mouser Electronics | Power

ROHM N-Channel SiC (Silicon Carbide) power MOSFETs. available from Mouser, have no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturisation and energy savings than standard silicon devices, in which the ON resistance can more than double with increased temperature. Typical applications include solar inverters, DC-DC converters, switch mode power supplies, induction heating, and motor drives. These MOSFETS include the SCT3x 3rd generation SiC trench MOSFETs with reduced ON resistance.