Switch eases integration of GaN amplifiers in high-speed pulsed power systems

22-04-2016 | RFMW | Connectors, Switches & EMECH

Offering easy integration of GaN amplifiers in high speed, pulsed power
systems, RFMW has announced it now stocks the XSYSTOR 365CT000, 40A pulsed

The CMOS, complementary MOSFET switches have clocked speeds of <200nSec for
rise and fall times. Allowing source and drain voltages from 28 to 80V, the
XSYSTOR switch is compatible with standard and high voltage GaN amplifiers
and transistors. Operating temperature is specified for -40C to 85C but will
withstand 175C with derated voltage and current capacity.

The 365CT000 is offered in a small, 23mm x 27mm, castellated SMT package
allowing it to be placed on or near the voltage supply line's RF choke.
Inverting and non-inverting voltage controllers and sequencers for GaN
implementations are also available, says the company.

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