Power transistors suitable for a variety of RF power amplifier applications

27-01-2015 | Mouser Electronics | Semiconductors

Suitable for a variety of RF power amplifier applications, Macom's
MAGX-000035-0150x GaN HEMT Pulsed Power Transistors are now available from
Mouser stock.

The gold metalized Gallium Nitride (GaN) on Silicon Carbide RF Power
transistors use a state-of-the-art wafer fabrication process to offer high
gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for
demanding applications.

Designed using a thermally-enhanced flanged (Cu/W) or flangeless (Cu)
ceramic package, MAGX-000035-0150x provides high thermal performance. High
breakdown voltages enable reliable and stable operation in extreme
mismatched load conditions unparalleled with older semiconductor
technologies.

The GaN on SIC depletion mode transistors feature common source
configuration, broadband class AB operation, +50V typical operation, 15W of
output power, and MTTF of 600 years. Typical applications can include
commercial wireless infrastructure (WCDMA, LTE, WiMAX), air traffic control
radar, weather radar, defence radar, public radio, industrial, scientific
and medical, and sitcom and instrumentation, says the company.

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