Discrete GaN on SiC HEMT RF power transistors operates from DC to 3.5GHz

TriQuint's T1G4004532 GaN RF power transistors are now available from Mouser stock. The 45W (P3dB) discrete GaN on SiC HEMT devices operate from DC to 3.5GHz. They are constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant. The devices are capable of satisfying the requirements of the most demanding radar, communications and test systems.