Discrete GaN on SiC HEMT RF power transistors operates from DC to 3.5GHz

12-01-2015 | Mouser Electronics | Semiconductors

TriQuint's T1G4004532 GaN RF power transistors are now available from Mouser
stock. The 45W (P3dB) discrete GaN on SiC HEMT devices operate from DC to
3.5GHz. They are constructed with TriQuint's proven TQGaN25 process, which
features advanced field plate techniques to optimize power and efficiency at
high drain bias operating conditions. This optimization can potentially
lower system costs in terms of fewer amplifier line-ups and lower thermal
management costs. Lead-free and ROHS compliant. The devices are capable of
satisfying the requirements of the most demanding radar, communications and
test systems.

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