High-performance 10W output achievable with GaN-on-SiC power amplifier

Mouser is now stocking Qorvo’s TGA2976-SM gallium nitride power amplifier. Developed using Qorvo’s production 0.25µm GaN on silicon carbide process, it provides exceptional wideband performance, power, power added efficiency, and gain. GaN technology supports radio frequency power densities between five and six times higher than gallium arsenide-based RF amplifiers. GaN technology’s proven performance and reliability makes it an ideal choice for infrastructure, defense and aerospace applications such as radar, electronic warfare, communications, navigation, and similar applications. This increase in performance capability offers designers the flexibility to reduce board space and system costs while improving system performance. The wideband amplifier is lead-free and RoHS compliant, offers exceptional wideband performance, and supports 40V operation. It operates from 0.1GHz to 3GHz and provides greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 38 percent PAE. The device is fully matched to 50ohms at both RF ports, allowing for simple system integration. Available in a low-cost, 4mm × 4mm surface-mount air cavity laminate package, the amplifier is well-suited for radar and communication applications used in defence and commercial markets.