Rugged RF power transistors integrate dual-sided ESD and internal matching

NXP's BLL8Hxx family of RF power transistors are now available from Digi-Key. Developed from 8th-generation technology, the 50V LDMOS devices are designed to serve L-band radar applications. The BLL8Hxx family offers exceptional broadband operation (1.2-1.4GHz), and is available in output power levels of 25W, 130W, 250W, and 500W (P,1dB). The BLL8Hxx family features integrated dual-sided ESD, internal matching, improved ruggedness, high efficiency (typ. 50%) and high thermal stability, says the company.