Fully-matched, RF power transistor ideal for C-band CW application

Integra Technologies has announces a new, fully-matched, gallium nitride on silicon carbide (GaN/SiC), RF power transistor that is ideal for C-band, continuous wave (CW) applications. IGT5259CW25 is fully matched to 50Ohms, operates at the instantaneous frequency range 5.2-5.9GHz, and offers a minimum of 25W of output power at 36V drain bias. It features 12dB of gain, and 48% efficiency at CW conditions. (Negative gate voltage and bias sequencing are required when utilizing this transistor.)