Gate driver designed to drive power MOSFET, IGBT and GaN transistors

The Texas Instruments UCC21222 device is an isolated dual-channel gate driver with programmable dead time. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, IGBT, and GaN transistors. The device can be configured as two high-side drivers, two low-side drivers, or a half-bridge driver. Delay matching performance of 5ns provides two outputs to be paralleled, doubling the drive strength for heavy load conditions without risk of internal shoot-through. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 100V/ns CMTI. Resistor programmable dead time gives the capability to adjust dead time for system constraints to increase efficiency and stop output overlap. Other protection points include: Disable feature to shut down both outputs simultaneously when DIS is set high, integrated deglitch filter that rejects input transients shorter than 5ns, and negative voltage handling for up to -2V spikes for 200ns on input and output pins. All supplies have UVLO protection.