High-efficiency GaN HEMTs for RF power amps offer a versatile, general-purpose broadband solution

Mouser is now stocking the CG2H40xx and CG2H30070 gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) from Wolfspeed, a Cree company. Operating from a 28V rail, the two HEMTs offer a versatile, general-purpose broadband solution for a variety of radio frequency (RF) and microwave applications. The company's reliable HEMTs are characterised by high efficiency, high gain and wide bandwidth, making them a perfect choice for linear and compressed amplifier circuits. The GaN HEMTs offer best-in-class reliability and an option of two package types: a screw-down flange package or solder-down pill package. Created with the same footprint as past 0.4µm devices, the new HEMTs can be used as drop-in replacements in current applications. The transistors are capable of high-frequency operation to 6GHz and deliver 62% efficiency at PSAT. The high efficiency and wide bandwidth of these GaN HEMTs enable RF design engineers to improve the performance of their RF amplifiers easily and quickly. The transistors are an excellent option for a broad range of RF power amplifier applications. These range from defence communications and radar equipment to commercial RF applications in industrial, medical and scientific industries.