New SiC MOSFETs target ultra high-voltage pulse generators

06-03-2015 | ROHM Semiconductor | Design Applications

Rohm has announced the adoption of its SCT2080KE SiC MOSFET in new, ultra
high-voltage pulse generators (SiC-Pulser Series) launched by Fukushima SiC
Applied Engineering.

Pulse generators are used in a variety of applications, including high
voltage accelerators, plasma generators, and laser processing machines.
Conventional systems utilize silicon devices or vacuum tubes as switching
elements. However this often entails a large number of system components
which often results in enormous construction and installation costs.

In contrast, SiC switching elements combine high breakdown voltage with low
on-resistance and high-speed switching performance. By adopting ROHM's SiC
devices in the switch module, pulse generators can be made considerably
smaller and provide a level of performance that cannot be achieved with
conventional systems.

According to Fukushima SiC Applied Engineering Inc. president, Kokubo: "In
developing a revolutionary breakthrough pulse generator we evaluated a
number of different switching elements. As a result, we determined that
Rohm's SiC MOSFET was able to meet our criteria for reliability and
performance. This marks the world's first practical application of SiC in a
pulse generator." He also explained how different this system was from
conventional ones. "For example, when trying to achieve a normal conducting
linac (linear accelerator) with a beam output on the order of tens of kW,
conventional vacuum tube acceleration technology will result in a linac that
is 1600m long. However by adopting SiC-based acceleration technology we can
reduce the length of the linac to less than 6m, thereby decreasing
construction and installation costs significantly.

Since the March, 2011 Tohoku earthquake, Kokubo stated that his company is:
"Supporting reconstruction by implementing build-to-order manufacturing of
advanced power electronics products using these SiC devices at the Fukushima
facility." He concluded by saying, "Going forward, we would like to work
together to expand the possibilities of SiC to a variety of fields."

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