Power transistors suitable for a variety of RF power amplifier applications

Suitable for a variety of RF power amplifier applications, Macom's MAGX-000035-0150x GaN HEMT Pulsed Power Transistors are now available from Mouser stock. The gold metalized Gallium Nitride (GaN) on Silicon Carbide RF Power transistors use a state-of-the-art wafer fabrication process to offer high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for demanding applications. Designed using a thermally-enhanced flanged (Cu/W) or flangeless (Cu) ceramic package, MAGX-000035-0150x provides high thermal performance. High breakdown voltages enable reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. The GaN on SIC depletion mode transistors feature common source configuration, broadband class AB operation, +50V typical operation, 15W of output power, and MTTF of 600 years. Typical applications can include commercial wireless infrastructure (WCDMA, LTE, WiMAX), air traffic control radar, weather radar, defence radar, public radio, industrial, scientific and medical, and sitcom and instrumentation, says the company.