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Vishay – Next-generation n-channel power MOSFETs offer ultra-low on-resistance
Published May 2 2012 

Vishay has released the first devices in its next-generation D Series of
high-voltage power MOSFETs. The new 400V, 500V, and 600V n-channel devices
combine low specific on-resistance with ultra-low gate charge and currents
from 3A to 36A in a wide range of packages.

Based on a new high-voltage stripe technology, the D Series MOSFETs released
today enable new levels of efficiency and power density. The devices’ stripe
design – with a smaller die size and terminations – lowers the total gate
charge by 50% compared with previous-generation solutions while increasing
switching speed and reducing on-resistance and input capacitance.

The 400V, 500V, and 600V devices feature on-resistance down to 0.17ohm,
0.13ohm and 0.34ohm, respectively. The ultra-low on-resistance values
translate into extremely low conduction and switching losses to save energy
in high-power, high-performance switch mode applications, including server
and telecom power systems, welding, plasma cutting, battery chargers,
ballast light, high-intensity discharge (HID) lighting, semiconductor
capital equipment, and induction heating.

With gate charges down to 9nC for the 400V devices, 6nC for the 500V
devices, and 45nC for the 600V devices, the D Series MOSFETs offer
best-in-class gate charge times on-resistance – a key figure of merit (FOM)
for MOSFETs used in power conversion applications – down to 7.65ohm-nC,
15.6ohm-nC, and 12.3ohm-nC, respectively.

The D Series MOSFETs feature simple gate-drive circuitry and high body diode
ruggedness, and they are easy to design into more compact, lighter, and
cooler end products. The devices are RoHS-compliant, halogen-free according
to the IEC 61249-2-21 definition, and avalanche (UIS)-rated for reliable
operation, says the company.

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