The devices are optimized for light curtains, miniature switches, encoders, and photo-interrupters in metering, automotive, and printer applications; and detectors for visible and infrared emitter sources in proximity applications.
The photodiodes offer a 12µA light current and spectral sensitivity range of 350nm to 1120nm, while the phototransistors offer a light current of 6mA and spectral sensitivity range of 470nm to 1090nm. The VEMD25x0X01 and VEMT25x0X01 devices feature a 1nA dark current, ± 15 degree angle of half sensitivity, temperature range of -40C to +100C, and have a matching IR emitter in the high-intensity, high-speed VSMB20x0X01.
While most photo detectors only feature a moisture sensitivity level (MSL) of 3 and must be mounted within 72 hours of being unsealed or removed from protective packing, the VEMD25x0X01 and VEMT25x0X01 devices can remain on the plant floor for up to four weeks, due to their MSL of 2a, per J-STD-020. The photo detectors support lead (Pb)-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, are halogen- free according to the IEC 61249-2-21 definition, and are compatible with lead (Pb)-free reflow solder assembly, says the company.
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