Meeting high power demands with low RDS(on) power transistors in TOLL package

Innoscience has announced new, low RDS(on), high-power devices in its ever-growing family of 650V/700V enhancement-mode power transistors. New 30mOhm, 50mOhm, and 70mOhm RON parts are available in the industry-standard TOLL package. The 70mOhm part is also available as an 8x8 DFN part.

Dr Pengju Kong, VP of Product Design Engineering at Innoscience, comments: “GaN power devices make power conversion smaller. With a Ron Qg (Total Gate Charge) that is 10x better than silicon devices, GaN parts enable higher frequency and high efficiency. High frequency means smaller passives, facilitating higher power density systems that are often also cheaper. Additionally, as GaN power devices do not have a body diode, there is no reverse recovery current. This leads to simpler and cheaper system topology while maintaining or increasing performance.”

Members of a new high-power product platform from the company, the new INN650TA0x0AH and INN650DA070AH (DFN) devices address challenges in several market sectors. For example, reaching the latest efficiency standards with silicon technology is challenging while keeping a small PSU size. A demo based around INN650TA030AH 650V/30mOhm GaN transistor shows a 4.2kW Totem Pole PFC design that effortlessly meets the 80+ Titanium Plus specifications. Power-hungry data centres are now demanding 1-2kW/rack. Using its new HEMTs, the company has demonstrated a 4.2kW PSU with a power density of 130W/in3 that meets 80+ Titanium Plus ratings. For comparison, a well-known supplier of PSUs for such applications using silicon devices is quoting 46W/in3, which would result in a unit that is 40% larger.