Isolated dual-channel gate driver offers high power density, high efficiency and robustness

The UCC21225A, from Texas Instruments, is an isolated dual-channel gate driver with 4A source and 6A sink peak current in a space-saving 5mm x 5mm LGA13 package. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz with best-in-class propagation delay and pulse-width distortion, in applications requiring the highest power density. The input side is isolated from the two output drivers by a 2.5kVRMS reinforced isolation barrier, with a minimum of 100V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 700VDC. This driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously when it is set high, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have UVLO protection. With all these advanced features, the device enables high power density, high efficiency, and robustness in a wide variety of power applications.