Isolated dual-channel gate driver enables high power density, high efficiency and robustness

24-05-2017 | Texas Instruments | Power

The UCC20225, from Texas Instruments, is an isolated single input, dual-channel gate driver with 4A source and 6A sink peak current in a space-saving 5mm x 5mm LGA-13 package. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion, in applications requiring the highest power density. The input side is isolated from the two output drivers by a 2.5kVRMS reinforced isolation barrier, with a minimum of 100V/ns CMTI. Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 700VDC. This driver can be used for half-bridge driver with programmable DT. A disable pin shuts down both outputs simultaneously when it is set high, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have UVLO protection. With all these advanced features, the device enables high power density, high efficiency and robustness in a wide variety of power applications.
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By Electropages Admin