Isolated gate bipolar transistors have robust and cost-effective construction

ON Semiconductor NGTB25N and NGTB40N isolated gate bipolar transistors (IGBT), available from Mouser, feature a robust and cost effective ultra field stop trench construction. Low switch losses and an ultra fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. Incorporated into these devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.