High-voltage gate device drives both high-side and low-side N-Channel MOSFETs

07-07-2015 | Texas Instruments | Power

This post is sponsored by Texas Instruments. Latest from Texas Instruments (TI) is the SM74104, a high-voltage gate driver designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck configuration. The floating high-side driver is capable of working with supply voltages up to 100V. The high side and low side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails.
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By Electropages Admin