Insulated gate bipolar transistors for demanding switching applications

Offering superior performance in demanding switching applications, ON Semiconductor's Field Stop II series insulated gate bipolar transistors (IGBT) are now available from Farnell element14. The device's high performance is achieved through a robust and cost-effective Field Stop II Trench construction, which offers both low on-state voltage and minimal switching loss. Ultra-thin wafer and backside processing is the enabling technology for reducing both conduction and switching power conversion losses. Voltage options range from 600V to 1350V, while current ranges are from 15A to 75A at 100C. These characteristics make the Field Stop II IGBTs well suited to uninterruptible power supplies (UPS) and solar applications.