RFMD – High-efficiency GaN RF matched power transistor targets pulsed-radar applications (RFHA1025)Aug 29 2012 - Design Applications [More Design Applications Articles]
Offering superior performance versus competing silicon power technologies, RF Micro Devices (RFMD) has released the RFHA1025, a highly-efficient 280W pulsed gallium nitride (GaN) RF matched power transistor.
The RFHA1025 complements the recently released 380W RF3928B, the highest output power S-Band device in RFMD’s matched power transistor family.
RFMD’s GaN matched power transistors extend range, reduce size and weight, and improve overall ruggedness in new and existing radar architectures. The RFHA1025 operates over a broad frequency range (0.96-1.2GHz) and delivers 280W pulsed power, high gain >14dB, and high peak efficiency of >55%. Additionally, the RFHA1025 incorporates internal matching to simplify and shrink designers’ circuits. Packaged in a hermetic, flanged ceramic package, the RFHA1025 leverages RFMD’s advanced heat sink and power dissipation technologies, delivering excellent thermal stability and conductivity. RFMD’s RF393x unmatched power transistors (UPT) can be used as drivers to the RFHA1025, says the company.
Jeff Shealy, general manager of RFMD’s Power Broadband Business Unit, said: “RFMD is pleased to expand our GaN-based product portfolio, offering industry-leading power performance in support of diverse end markets. RFMD’s GaN product portfolio demonstrates our commitment to technology and product leadership, and we look forward to introducing additional GaN devices in the near term that feature superior power density, high power efficiency, and rugged dependability.”More news from RF Micro Devices