Fairchild – Latest MOSFETs provides higher power density and increase efficiency in SMPS (40V FDMS015N04B)

power density and light-load efficiency improvement are key issues for server, telecom and AC-DC power designers. Additionally, the synchronous rectification in their switch-mode power supplies (SMPS) designs require cost-effective power supply solutions that minimize board space while increasing efficiency and reducing power dissipation. In response, Fairchild Semiconductor has expanded its PowerTrench MOSFET family.

Part of the mid-voltage power MOSFET portfolio, the devices are optimized power switches that combine a small gate charge (QG), a small reverse recovery charge (Qrr) and a soft-reverse recovery body diode, allowing for fast switching speeds. Available in a 40V, 60V and 80V rating, these devices require less power dissipation in the snubber circuitry due to an optimized soft-body diode that reduces voltage spikes by up to 15 percent over the competitor’s solution.

Employing a shielded-gate silicon technology that provides charge balance, the devices achieve higher power density, low ringing and better light-load efficiency. By using this technology, the devices achieve a lower figure of merit (QG x RDS(ON)) while reducing driving loss to increase power efficiency.

The first devices available include the 40V FDMS015N04B and 80V FDMS039N08B available in a Power56 package, and the 60V FDP020N06B and 80V FDP027N08B available in a TO-220 3-lead package, says the company.