Semiconductors


Farnell element14 – N-channel TrenchMOS intermediate level FET (BUK6C2R1-55C)

Aug 24 2012 - Semiconductors [More Semiconductors Articles]

NXP’s BUK6C2R1-55C intermediate level gate-drive N-channel enhancement mode Field-Effect Transistor (FET) is now available from Farnell element14. Employing TrenchMOS technology, the plastic packaged BUK6C2R1-55C MOSFET features 55V drain to source voltage, 228A drain current, 300W total power dissipation, 56ns typical reverse recovery time, 0.8V typical source to drain voltage and -55C to +175C junction temperature.

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