Vishay – New 8V n-channel power MOSFET offers industry’s lowest on-resistance (SiA436DJ)

Vishay has introduced a new 8V n-channel TrenchFET power MOSFET featuring the industry’s lowest on-resistance for an n-channel device in the thermally enhanced PowerPAK SC-70 2 mm x 2mm footprint area, says the company.

The new SiA436DJ offers an ultra-low on-resistance of 9.4mohm at 4.5V, 10.5mohm at 2.5 V, 12.5mohm at 1.8V, 18mohm at 1.5V, and 36mohm at 1.2V. These values are up to 18% lower than previous-generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2mm x 2mm footprint area.

The SiA436DJ will be used for load switching in portable electronics such as smartphones and tablet PCs, as well as mobile computing applications. The device’s ultra-compact PowerPAK SC-70 package saves PCB space in these applications while its low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency. The MOSFET’s on-resistance ratings down to 1.2V simplify circuit design by allowing the MOSFET to work with the low-voltage power rails common in handheld devices, providing longer battery operation between charges. The SiA436DJ’s low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. The SiA436DJ is 100 % Rg-tested, halogen-free in accordance with IEC 61249-2-21, and RoHS-compliant.