Diodes Inc. – Low-profile high-efficiency N- and P-channel MOSFETs (DMN2013UFDE)Apr 19 2012 - Semiconductors [More Semiconductors Articles]
A new line of high-efficiency N- and P-channel MOSFETs, in low-profile DFN2020-6 packages, has been introduced by Diodes Incorporated
With an off-board height of only 0.4mm and a footprint of 4mm2, the DFN2020H4 packaged DMP2039UFDE4, a -25V rated P-channel device, is 50% thinner than other devices. The other MOSFETs in the series are provided in the 0.5mm high DFN2020E package, which is 20% thinner than the common 0.6mm high alternatives.
Aimed at load-switching applications, the DMP2039UFDE4 also provides circuit designers with 3kV protection against human-borne electrostatic discharge. The new MOSFETs’ low typical RDS(on), for example just 13mohm at a VGS of 4.5V for the -12V P-channel DMP1022UFDE, means conduction losses can also be minimized in battery-charging applications.
The 20V N-channel DMN2013UFDE makes an ideal load switch or high-speed switch in DC/DC buck and boost converters and again offers a high 2kV ESD protection rating. Operating at a VDS of 60V, the DMN6040UFDE is one of the first high-voltage MOSFETs to be introduced in the DFN2020 package and suits small form-factor industrial and HVAC controls.
Particularly well-suited to ultra-slim portable product designs, such as smart phones, tablets and digital cameras, the initial series of nine MOSFETs is comprised of -12V, -20V, -25V and -40V P-channel and 12V, 20V and 60V N-channel parts, says the company.Electropages - Electronics Components News, From Leading Electronics Distributors. More news from Diodes Inc