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RS – N-channel logic level enhancement mode field effect transistor (FDV301N)

Jan 19 2012 - Semiconductors [More Semiconductors Articles]

Now available from RS Components, Fairchild’s FDV301N 0.35W MOSFET is an N-channel logic level enhancement mode field effect transistor produced using proprietary, high cell density, DMOS technology.

This high-density process is especially tailored to minimize on-state resistance. The device has been designed especially for low-voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values, says the company.

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